Abstract: In this letter, we investigated oxygen ion concentration gradient method, which can manipulate the set voltage of zinc oxide-doped silicon oxide resistance random access memory. Y1 - 2020/5. PY - 2020/5. Resistive switching devices based on halide perovskites exhibit promising potential in flexible resistive random‐access memory (RRAM) owing to low fabrication cost and low processing temperature. Resistance Random Access Memory Based on a Thin Film of CdS Nanocrystals Prepared via Colloidal Synthesis. Abstract: A method of fabricating a RRAM includes preparing a substrate and forming a bottom electrode ori the substrate. Such resistance modulation usually involves ion migration and filament formation, which usually lead to relatively low device reliability and yield. Resistance random access memory Author: Chang, Ting-Chang Chang, Kuan-Chang Tsai, Tsung-Ming Chu, Tian-Jian Sze, Simon M. Journal: Materials Today Issue Date: 2015 Page: S1369702115003843. However, their capacity is limited by sneak paths and the sensitivity of the sense amplifiers (SA). What is the abbreviation for Resistance Random Access Memory? Vertically aligned ZnO nanorod layers (NRLs) were deposited on indium tin oxide (ITO) electrodes using a hydrothermal process/ chemical bath deposition (CBD). We present a review on the subject of Conductive Bridging Random Access Memory (CBRAM) based on copper- or silver-doped silicon dioxide. Seungwook Kim. To analyze this method, the ITO/ZnO:SiO 2 /ZnOx/TiN bilayer structure was proposed and discussed. A transparent resistance random access memory (RRAM) structure consisted of all-ZnO-based film is fabricated by the pulsed laser deposition method at room temperature. Resistance switching random-access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND flash memory. RAM critically depends on being able to distinguish two different values (“on” and “off”, for example) by examining retained state information. What does RRAM stand for? AU - Kang, Dae Yun. Phase change memory can be referred to by a number of names including P-RAM or PRAM, PC-RAM, phase change RAM, and possibly more. We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydration–dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses. Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. The present invention provides a resistance random access memory structure, including a plurality of word lines in a substrate, a plurality of reset lines coupled to the word lines, a dielectric layer on the substrate, a plurality of memory units in the dielectric layer. Resistance switching random-access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND fl ash memory. @article{osti_22596644, title = {Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current}, author = {Lin, Chun-Cheng and Department of Mathematic and Physical Sciences, R.O.C. RRAM abbreviation stands for Resistance Random Access Memory. Authors Shuting Liu 1 , Shurong Dong, Xingang Wang, Lin Shi, Hongsheng Xu, Shuyi Huang, Jikui Luo. Fast and stable switching behaviour … The device is based on transparent Mg-doped ZnO films, sandwiched by Al-doped ZnO as electrodes. This effect may be reversed to return the device to a high resistance state. To surmount the technical and physical limitation issues of conventional charge storage-based memories [13-17], the resistance random access memory (RRAM) is a kind of promising NVM due to its superior characteristics such as low cost, simple structure, high-speed operation, non-destructive readout, and the compatibility in the semiconductor industry [18-39]. Both lowering the “reset” current of resistance random access memory (ReRAM) and raising the resistance in the low resistance state are crucial for practical use of ReRAM. It can be found the Ag/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior. Based on the experimental data it is concluded that the resistance increase is due to localization of valence electrons. Phase change memory is based on a technique known as the memresitor that was … The characteristics and mechanism of conduction/set process in Ti N ∕ Zn O ∕ Pt-based resistance random access memory devices with stable and reproducible nanosecond bipolar switching behavior were studied. T1 - Forming-ready resistance random access memory using randomly pre-grown conducting filaments via pre-forming. A transparent resistance random access memory (RRAM) structure consisted of all-ZnO-based film is fabricated by the pulsed laser deposition method at room temperature. Low power consumption resistance random access memory with Pt/InO x/TiN structure Jyun-Bao Yang,1 Ting-Chang Chang,1,2,3,a) Jheng-Jie Huang,2 Yu-Ting Chen,1 Hsueh-Chih Tseng,2 Ann-Kuo Chu,1 Simon M. Sze,2,4 and Ming-Jinn Tsai5 1Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan 2Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan United States Patent 7407858 . 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